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| inchange semiconductor product specification silicon npn power transistors 2N5239 description ? with to-3 package ? high breakdown voltage ? high power dissipation applications ? switching regulator ? inverters ? power amplifiers ? deflection circuits ? high-voltage bridge amplifiers pinning (see fig.2) pin description 1 base 2 emitter 3 collector maximun ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 225 v v ebo emitter-base voltage open collector 6 v i c collector current 5 a i b base current 2 a p t total power dissipation t c =25 ?? 100 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.75 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2N5239 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ; i b =0 225 v v (br)ebo emitter-base breakdown voltage i e =20ma ; i c =0 6 v v cesat-1 collector-emitter saturation voltage i c =2a; i b =0.25a 2.5 v v cesat-2 collector-emitter saturation voltage i c =4.5a; i b =1.125a 5.0 v v be base-emitter on voltage i c =2a ; v ce =10v 3.0 v i cev collector cut-off current v ce =300v; v be =-1.5v t c =150 ?? 4.0 5.0 ma i ceo collector cut-off current v ce =200v; i b =0 5.0 ma i ebo emitter cut-off current v eb =5v; i c =0 5.0 ma h fe-1 dc current gain i c =0.4a ; v ce =10v h fe -2 dc current gain i c =2a ; v ce =10v 20 80 h fe-3 dc current gain i c =4.5a ; v ce =10v 5 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 250 pf f t transition frequency i c =0.2a ; v ce =10v 2 mhz inchange semiconductor product specification 3 silicon npn power transistors 2N5239 package outline fig.2 outline dimensions |
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